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| SMD Type MOS Field Effect Power Transistor 2SK1954 IC MOSFET Features Low on-resistance RDS(on)=0.65 (VGS=10V,ID=2A) Low Ciss Ciss=300pF typ +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm High Avalanche Capability Ratings +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID PD Tch Tstg Rating 180 20 4.0 20 150 -55 to +150 Unit V V A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to Source Cutoff Voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=180V,VGS=0 VGS= 20V,VDS=0 2.0 0.5 0.52 300 VDS=10V,VGS=0,f=1MHZ 170 50 9 ID=2A,VGS(on)=10V,RL=50 12 28 12 0.65 pF pF pF ns ns ns ns Min Typ Max 100 10 4.0 Unit A A V S VGS(off) VDS=10V,ID=1mA Yfs VDS=10V,ID=2.0A RDS(on) VGS=10V,ID=2.0A Ciss Coss Crss td(on) tr td(off) tf 3.80 Built-in G-S Gate Protection Diode www.kexin.com.cn 1 |
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